METHOD FOR PRODUCTION OF SEMICONDUCTOR PHOTODETECTOR FROM SINGLE-CRYSTAL SILICON Russian patent published in 1999 - IPC

FIELD: renewable power sources. SUBSTANCE: before baking chips with p+-n-n+ structure method involves orientation in same crystal axis and separation of n+ region from aluminum layer by foil-shaped silumin layer or silumin layer produced by vacuum deposition in vacuum oven; silicon content is within range of 10-30 %, depth is within range of 10-30 mcm. Baking is achieved in vacuum oven under pressure using temperature 650-750 C. Chip is heated up to this temperature for 15-30 min, kept for 5-10 min and cooled with temperature gradient of about 40-80 C per hour. EFFECT: elimination of aluminum compensation in n+ region, improved alloy junction, increased mechanical strength and temperature resistance.