PHOTO ELECTRIC CONVERTER (VERSIONS) AND METHOD OF ITS FABRICATION (VERSIONS) Russian patent published in 2011 - IPC H01L31/18 H01L31/04 

FIELD: physics.

SUBSTANCE: semiconductor photo converter comprises matrix made up of micro elements switched in parallel with the help of contacts with base region and doped regions of n⁺-p-n⁺(p⁺-n-p⁺) structures. Planes of p-n transitions and contacts to doped n⁺(p⁺) regions are perpendicular to operating side whereon radiation falls. One or two linear sizes of each micro element are comparable with double diffusion length of charge minority carrier in base region. Rear side of each micro element accommodates contacts to base region. Each micro element comprises regions with additional isotype p-p⁺(n-n⁺) transitions arranged along operating and rear sides and separated from p-n transitions by gap with width, at least, 10 times smaller the micro element size, while base and doped regions with no contacts comprises passivating clarifying film. Invention covers versions of above described photo converter and versions of its production.

EFFECT: higher efficiency due to reduced losses for recombination.

12 cl, 4 dwg