FIELD: technology of creation of patterns with the use of charged particle. SUBSTANCE: invention can be used for manufacture of various electron devices, storages, etc having complex structures and composed of assemblage of supersmall elements. Process of pattern manufacture includes transmission of beam of charged particles through mask and its subsequent focusing on to irradiated surface. In this case beam directed on to mask is formed with spread of 10-2 rad and dispersion of charged particles by energies in beam equal to 0.1-5.0 eV. EFFECT: enhanced resolution and possibility of manufacture of individual elements of pattern with geometrical dimensions in the order of several nanometers. 1 dwg, 2 tbl
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Authors
Dates
1999-04-20—Published
1998-05-22—Filed