METHOD FOR PRODUCING THREE-DIMENSIONAL CONDUCTING STRUCTURE Russian patent published in 2003 - IPC

FIELD: microelectronics; midget devices, integrated circuits, memory devices, and optical members. SUBSTANCE: method using only one mask for producing three- dimensional multilayer conducting structure involves irradiation of blank of two- or many-atom dielectrics by accelerated particle flow ensuring selective removal of nonmetal atoms from blank material through single mask that bears pattern in the form of through and blind holes of different height, this being followed by processing the blank through this mask with nonmetal ion flow to provide for recovery of insulating properties of blank material in desired areas; mask thickness should be greater than projective transit time of accelerated particles therein. EFFECT: facilitated manufacture. 7 cl, 1 dwg, 2 tbl