METHOD FOR FORMATION OF CONDUCTORS IN NANOSTRUCTURES Russian patent published in 2013 - IPC H01L21/263 B82B3/00 

FIELD: electrical engineering.

SUBSTANCE: method for formation of conductors in nanostructures involves application onto the substrate of the initial dielectric substance into the molecules whereof metal atoms are included, complete removal non-metal atoms from the substance in the chosen sections by way of the dielectric substance radiation, through a mask, with a beam of accelerated particles and repeated radiation of the said sections with beams of accelerated ions or non-metal atoms included into the composition of the initial dielectric substance with the dose ensuring reduction of volume of the metal conductors formed in the process of primary radiation.

EFFECT: reduction of sizes of conductors formed, expansion of the range of materials used, simplification of requirements to sizes ratio in the mask.

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