FIELD: electricity.
SUBSTANCE: method for formation of conducting structure in dielectric matrix includes application of mask with holes that produce required pattern, onto film or billet of oxide of metal or superconductor, radiation of mask (billet) by a flow of speeded protons or atoms of hydrogen and further exposure of radiated sections to oxygen, at the same time holes in mask are arranged with aspect ratio, providing for production of structure elements of smaller size compared to transverse size of holes in mask.
EFFECT: development of conditions providing for formation of structure elements with dimensions that are considerably smaller than dimensions of holes in mask.
4 cl, 6 ex, 5 tbl, 1 dwg
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