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IPC

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Application

98109498/25, 1998-05-22

(22)

Actual filing date

1998-05-22

(45)

Published

1999-04-20

(72)

Inventor

Gurovich B.A.Dolgij D.I.Velikhov E.P.Kuleshova E.A.Aronzon B.A.Mejlikhov E.Z.Rjazantsev E.P.Ryl'Kov V.V.Prikhod'Ko K.E.Domantovskij A.G.Shtrombakh Ja.I.Ol'Shanskij E.D.

(73)

Holder

Gurovich Boris AronovichDolgij Dmitrij IosifovichVelikhov Evgenij PavlovichKuleshova Evgenija Anatol'EvnaAronzon Boris AronovichMejlikhov Evgenij ZalmanovichRjazantsev Evgenij PetrovichRyl'Kov Vladimir Vasil'EvichPrikhod'Ko Kirill Evgen'EvichDomantovskij Aleksandr Grigor'EvichShtrombakh Jaroslav IgorevichOl'Shanskij Evgenij Dmitrievich

CONDUCTING STRUCTURE FORMING PROCESS Russian patent published in 1999 - IPC

Abstract RU 2129320 C1

FIELD: microelectronics; development of subminiaturized devices, integrated circuits, storage devices, and optical parts. SUBSTANCE: separate components of structure measure from a few nanometers to tens of nanometers. Process involves deposition of material layer, 2-20 nm thick, onto substrate converted into conducting layer under influence of modulated beam from charged-particle source. EFFECT: improved resolving power of structure. 1 dwg, 2 tbl, 3 ex

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RU 2 129 320 C1

Authors

Gurovich B.A.

Dolgij D.I.

Velikhov E.P.

Kuleshova E.A.

Aronzon B.A.

Mejlikhov E.Z.

Rjazantsev E.P.

Ryl'Kov V.V.

Prikhod'Ko K.E.

Domantovskij A.G.

Shtrombakh Ja.I.

Ol'Shanskij E.D.

Dates

1999-04-20—Published

1998-05-22—Filed

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