FIELD: microelectronics; development of subminiaturized devices, integrated circuits, storage devices, and optical parts. SUBSTANCE: separate components of structure measure from a few nanometers to tens of nanometers. Process involves deposition of material layer, 2-20 nm thick, onto substrate converted into conducting layer under influence of modulated beam from charged-particle source. EFFECT: improved resolving power of structure. 1 dwg, 2 tbl, 3 ex
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Authors
Dates
1999-04-20—Published
1998-05-22—Filed