STRUCTURE PRODUCTION METHOD Russian patent published in 2003 - IPC

FIELD: manufacture of complex-structure electronic devices, memories, and the like incorporating plurality of midget components. SUBSTANCE: method is characterized in that substrate is covered with layer of material that converts its properties under action of stream of accelerated particles due to removal of atoms of one grade; this material is covered with at least three shielding layers of different-grade materials of which one disposed under upper later is made of material possessing short length of projective transition for accelerated particles used for the purpose and total thickness of all layers including physical spraying effected under action of particles exceeds design length of projective transition in them; embossed pattern is stamped in upper layer, respective pattern is etched in lower layers, blank is irradiated by stream of accelerated particles whose parameters afford selective removal of atoms of desired grade, and then shielding layers are removed. EFFECT: facilitated manufacture due to reducing thickness of shielding layers required for desired packing density of structure elements. 1 cl, 4 dwg