INTEGRAL CELL FOR RADIATION DETECTOR BASED ON BIPOLAR TRANSISTOR WITH CELLULAR BASE Russian patent published in 2011 - IPC H01L31/115 

FIELD: physics.

SUBSTANCE: according to the invention, the pixel bipolar structure with a cellular base has a semiconductor substrate in which there is a first-type conductivity collector on which there is a collector electrode, in the region of the collector there is a second-type conductivity base, in the region of the base there is a first-type conductivity emitter on which there is an emitter electrode. The region of the second-type conductivity base is in form of a mesh, where the value of the space-charge regions formed by the collector-base p-n junctions is greater than the distance between neighbouring lines of the cellular base. The structure with the cellular base improves charge collection while ensuring high coefficient of amplification of ionisation current caused by radiation particles.

EFFECT: high sensitivity of coordinate detectors and high signal-to-noise ratio.

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