FIELD: microelectronics. SUBSTANCE: in agreement with proposed process of formation of solid nanostructures surface of material is irradiated with beam of ions at angle different from normal. Period of manufactured structure for each material is specified by selection of type of ions and temperature values of treated material, energy of ions and their incidence angle. Substance which ions form dielectric compound with semiconductor material is selected for generation of beam of ions. EFFECT: development of process of manufacture of solid nanostructures suitable for production of semiconductor devices with high degree of integration and high-resolution optical devices. 2 cl, 1 dwg
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