FIELD: testing of semiconductors. SUBSTANCE: process can be used for accelerated tests of semiconductor photodetectors to predict their reliability in process of long-duration operation. Process is based on irradiation of photodetectors before exposure to temperature with gamma-neutron pulse with integrated flux lying within limits 5•109-5•1012 H/cm2 N/sq.cm with average energy of neutrons equal to 1.5 MeV. EFFECT: considerable shortening of duration of tests and reduced cost of them, increased authenticity of test results.
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