SEMICONDUCTOR DEVICE TEST TECHNIQUE Russian patent published in 2001 - IPC

FIELD: testing semiconductor devices including photodiodes for control and orientation systems. SUBSTANCE: devices are tested for resistance to environmental destabilizing factors as follows. Devices are irradiated and their characteristics are measured before and after exposure to environmental conditions. In order to ensure desired validity of test results, devices of same lot are exposed to simulated influencing factors approaching actual operating conditions of equipment; proposed technique includes impact of main destabilizing factors (nuclear explosion, space conditions, long-time exposure to high temperatures). Devices are first exposed to gamma- neutron radiation at mean neutron energy of 1.0-3.0 Me, then to temperature of 50-120 C for 1000-3000 h, followed by irradiation with protons. EFFECT: improved reliability of test results. _