PROCESS OF TESTING OF SEMICONDUCTOR DEVICES Russian patent published in 2002 - IPC

FIELD: tests of semiconductor devices for resistance to exposure to external destabilizing factors. SUBSTANCE: in proposed process resistance to exposure to external destabilizing factors is determined by results of following actions: gamma-neutron pulse radiation with average energy of neutrons equal to 1.0-3.0 MeV of specified level, gamma-neutron pulse radiation with average energy of neutrons equal to 1.0-3.0 MeV of level 10¹², holding at increased temperature of 40-135 C in the course of 10-150 h, gamma-neutron pulse radiation with average energy of neutrons equal to 1.0-3.0 MeV of level corresponding to proton radiation. Technical objective of proposed process lies in raised authenticity of results of tests, reduced labor input and time of tests and as consequence diminished cost of tests. This technical objective is achieved by employment of single set forming gamma-neutron pulse radiation with average energy of neutrons equal to 1.0-3.0 MeV and temperature effect for modeling various radiation exposures and long-term periods of equipment functioning. That is why this process is most rational and economic. Increased authenticity with the aid of given process is achieved due to fact that various destabilizing factors act on same devices under real conditions. EFFECT: raised authenticity of results of tests.