METHOD FOR PRODUCTION OF SEMICONDUCTOR AVALANCHE PHOTODIODE Russian patent published in 1999 - IPC

Abstract RU 2127473 C1

FIELD: semiconductor instruments with p-n junction. SUBSTANCE: during final stage of manufacturing avalanche photodiode after development of contacts method involves exposition to gamma-neutron pulse with average neutron energy of 1.0-3.0 MeV with integral flow of 5e9-5e12 N per sq. cm. EFFECT: improved crystal structure of avalanche photodiode across its complete surface, decreased microplasma noise, increased sensitivity due to increased operation voltage of avalanche photodiode.

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RU 2 127 473 C1

Authors

Vovk O.V.

Mel'Nikova T.M.

Dates

1999-03-10—Published

1997-07-22—Filed