FIELD: radiation tests of semiconductor devices. SUBSTANCE: method involves irradiation of photodetectors by pulsed gamma-neutron rays of reactor and measurement of photoelectric parameters before and after irradiation; radiation stability of photodetectors is determined by changes in these parameters. Proton and electron radiation stability is determined by results of testing for resistance to pulsed gamma-neutron radiation of reactor using definite factors of reactor neutron flux conversion to proton and electron fluxes as function of energies of reactor neutrons, protons, and electrons. EFFECT: facilitated procedure, reduced cost of tests.
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