RADIATION DETECTOR Russian patent published in 1999 - IPC

FIELD: photosensitive devices such as semiconductor infrared detectors. SUBSTANCE: radiation detector has cooled base and chip interconnected by means of metal frame through sealed joint; chip carries integrated circuit with contact pads connected to pin-type leads which are connected to output leads; pin-type leads are mounted directly on base; thin-film insulating sections are fitted between frame and base; external leads are made on base in the form of conducting tracks which are passed under insulating sections at point of their intersection with frame. As an alternative, insulating material inserted between frame and base may have stepped profile where it contacts metal frame. Thin- film insulating sections may be likewise inserted between frame and chip carrying photosensitive integrating circuit and may be offset relative to insulating sections fitted between frame and base. EFFECT: improved circuit-to-chip heat transfer, reduced cooling time and warm-up period, improved reliability of device. 5 cl, 3 dwg