PROCESS OF MANUFACTURE OF SEMICONDUCTOR MODULE Russian patent published in 1999 - IPC

FIELD: microelectronics. SUBSTANCE: proposed process includes submersion of one or several semiconductor crystals arranged on carrier-vacuum gripper into melt of eutectic compound applied to heated substrate, cooling of crystallizing monolith and formation of commutation. In this case eutectic compound is melted down in atmosphere of inert gas and is overheated to temperature exceeding eutectic point by 10-30 C and semiconductor crystals are heated to temperature 10-20 C below eutectic point. Closed space is formed above melt of eutectic compound prior to submersion of semiconductor crystals by means of installation of additional mount on carrier-vacuum gripper which thickness amounts to 1.2-1.5 thickness of semiconductor crystal and inert gas is removed. Crystallizing monolith is cooled at the rate of 10-30 C/min. EFFECT: increased quality of manufactured semiconductor modules. 1 dwg