KLYSTRON Russian patent published in 1999 - IPC

Abstract RU 2140115 C1

FIELD: microwave O-type devices including ribbon-beam and multiple-beam klystrons. SUBSTANCE: klystron has double-gap cavities; some of its cavities have holders of their central bushings secured to center of long side wall while holders of other cavities are attached to center of short side wall of central bushing. EFFECT: improved efficiency and operating stability. 3 cl, 6 dwg

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RU 2 140 115 C1

Authors

Frejdovich I.A.

Vorob'Ev M.Ju.

Rodionova T.V.

Dates

1999-10-20—Published

1997-12-04—Filed