METHOD FOR PLASMA ETCHING OF INSULATING LAYERS Russian patent published in 2003 - IPC

Abstract RU 2211505 C2

FIELD: microelectronics; integrated-circuit manufacture involving plasma etching of passivating coatings. SUBSTANCE: method involves plasma etching of double-layer passivating coating SiC-Si₃N₄ in gas mixture CF₄-O₂-Ar having following proportion of ingredients in parts by volume: (20 40) : 1 : - (40 60); high-frequency power supply to electrode holder followed by surface cleaning in gas mixture SF₆-Ar having following proportion of ingredients in parts by volume: 1 : (40 60), process being conducted in a single cycle without reprecipitation of fluorine-carbon polymeric film on semiconductor wafer surface. EFFECT: enhanced quality of parts due to elimination of fluorine-carbon film formation. 1 cl

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RU 2 211 505 C2

Authors

Alekseev N.V.

Eremenko A.N.

Kolobova L.A.

Klychnikov M.I.

Jachmenev V.V.

Dates

2003-08-27—Published

2001-09-28—Filed