METHOD OF MANUFACTURE OF IMPLANT WITH ELECTRET PROPERTIES FOR OSTEOSYNTHESIS Russian patent published in 1999 - IPC

FIELD: medical engineering, namely traumatology and orthopedics. SUBSTANCE: after ion cleaning in glow discharge, implant is heated within temperature range of 250-400 C, in vacuum of at least 10^-2 Pa. Then film of tantalum oxide Ta₂O₅ is deposited by magnetron spraying of tantalum target in mixture of argon with oxygen. Electret properties of film and enhanced efficiency of film production are provided due to ionic bombardment of tantalum oxide film in process of its deposition. Tantalum target is sprayed in mixture of argon at partial pressure of 10^-1-1 Pa and oxygen at partial pressure required for formation of stoichiometric oxide Ta₂O₅. EFFECT: enhanced efficiency of production. 2 cl, 1 ex, 1 dwg