SEMICONDUCTOR LASER Russian patent published in 2000 - IPC

FIELD: quantum electronics; current-, light-, and electron-beam-excited lasers. SUBSTANCE: laser built around stressed heterostructures based on double-sided separate-confinment heterostructures with wide waveguide has emitter layers of varying composition with respect to thickness; forbidden-gap thickness of emitter layers steplessly or stepwise reduces towards periphery of layers. Laser may be found useful as high-power radiation source for technology, medicine, solid-state laser pumping systems, communications and navigation systems, transducers. EFFECT: enlarged spectral radiation range, reduced crosswise beam divergence, improved service life of laser. 2 dwg