DOUBLE-DRAIN MOS MAGNETOTRANSISTOR Russian patent published in 1997 - IPC

FIELD: semiconductor magnetically sensitive devices such as digital transducers or sensing elements of integrated circuits for measuring magnetic fields. SUBSTANCE: double-drain MOS magnetotransistor is essentially structure built on semiconductor plate of first polarity of conductivity that has diffusion region of second polarity of conductivity and is surrounded by insulation with three regions for current contacts of first polarity of conductivity formed inside, contacts to them, and gate electrode. Gate electrode has cuts with regions for current contacts formed under them, their size being not less than that of cuts; side insulation formed over perimeter of gate electrode cuts has its edges aligned with those of contact cuts for these regions; low-resistance region of second polarity of conductivity is provided between external edge of gate electrode and its nearest edge of insulation section and has its width not smaller than distance between these edges. Magnetotransistor body depends only on configuration of gate electrode irrespective of degree of precision of process equipment and accuracy of alignment of configuration layers. EFFECT: reduced output signal at zero magnetic field. 2 dwg