THERMOELECTRIC MODULE AND ITS MANUFACTURING PROCESS Russian patent published in 2000 - IPC

FIELD: heat-to-electricity conversion engineering. SUBSTANCE: thermoelectric cell has semiconductor array of Bi-Sb-Te or Bi-Te-Se and diffusion barrier layer of Mo, W, Nb, or NI with tin alloy layer in-between to prevent diffusion of solder material into semiconductor array. Mentioned tin alloy layer is formed at semiconductor array interface by interdiffusion between tin and at least one of semiconductor elements. Cell manufacturing process includes the following stages: (a) treatment of thermoelectric semiconductor of Bi-Sb- Te or Bi-Te-Se with opposing faces; (b) coating of each opposing face of thermoelectric semiconductor with tin layer; (c) interdiffusion between tin and at least one element of thermoelectric semiconductor to form tin alloy layer on each opposing face of thermoelectric semiconductor; (d) application of diffusion barrier layer of Mo, W, Nb, or Ni on each tin alloy layer. EFFECT: improved adhesion between semiconductor array and diffusion barrier layer. 10 cl, 15 dwg, 2 tbl