FIELD: thermoelectrical equipment.
SUBSTANCE: invention relates to thermoelectric equipment and can be used in the production of thermoelectric generators. Essence: the method for manufacturing a high-temperature thermoelement with operating temperatures from 300 to 1000°C, consisting of two semiconductor branches of n - and p-type conductivity, the upper faces of which are connected by a common switching bus, and each lower face of the branches is connected to its own individual switching bus, includes the preparation of the surfaces of the upper and lower faces of the branches of the thermoelement, the creation of contact systems consisting of contact layers between the faces of the branches of the thermoelement and switching buses. The branches of the thermoelement are made of semiconductor materials, which are solid solutions of SiGe n-type of conductivity, doped with P, and SiGe p-type of conductivity, doped with B. The surfaces of the faces of the branches are prepared by mechanical processing to a roughness not exceeding the thickness of the first applied layer of the contact system. As the first layer, a layer of heavy metals Mo or W with a low resistivity is used. An additional diffusion-barrier layer is created between the first layer and the switching layer from an amorphous Ta-W-N film, which provides thermal stability of the contact system at high temperatures.
EFFECT: providing temporary thermal stability, increasing the mechanical strength, reliability and efficiency of a thermoelement with operating temperatures from the range of 300-1000°C.
1 cl, 1 tbl
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Authors
Dates
2021-10-20—Published
2020-12-17—Filed