FIELD: semiconductor devices. SUBSTANCE: process includes shaping channeled block of n-type thermoelectric semiconductor and channeled block of p-type thermoelectric semiconductor both provided with many channels equally spaced apart and made so that deep portion of respective blocks remains virgin. Then channeled blocks of n- and p-type thermoelectric semiconductors, respectively, are joined and glued together, and gaps at joint are filled with adhesive insulating members to form integral block. Upon removal of integral block portions which are beyond the joint between n- and p-type thermoelectric semiconductors, sections of these semiconductors are scraped bright. For final procedure, electrodes are shaped for series-interconnection of mentioned sections in alternating manner. In addition, it will be good practice to scrape thermoelectric semiconductor sections and to shape electrodes upon shaping channels for integral unit as the latter process involves formation of a great number of channels crossing those where vacant deep portions were shaped for integral block and upon curing of insulating members filling the channels formed. EFFECT: improved efficiency of manufacturing process. 22 cl, 34 dwg
