FIELD: electrician.
SUBSTANCE: semiconductor device includes: a substrate, a first conductivity type drift region formed on a base surface of the substrate, a second conductivity type pocket formed in the drift region main surface, a first conductivity type source region, formed in pocket, groove of gate formed from main surface of drift region in perpendicular direction, in contact with source area, pocket and drift area, drain area of first conductivity type, formed in main surface of drift region, a gate electrode formed on the surface of the groove of the gate with an interlocking film of the gate, a protective region of the second type of conductivity formed on the surface of the insulating film of the gate, which faces the drain area, and a region of connection of the second type of conductivity formed in contact with the pocket and the protective region.
EFFECT: invention is aimed at providing a semiconductor device capable of improving characteristics of a maintained voltage without increasing the size.
10 cl, 33 dwg
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