FIELD: electricity.
SUBSTANCE: in a semiconductor device an anode region 106 is shaped in the lower part of a groove 105, wherein a gating electrode 108 is shaped, or in a drift region 102 directly under the groove 105. A contact opening 110 is shaped in the groove 105 at the depth that ensures reaching the anode region 106. A source electrode 112 is built into the contact opening 110 when an insulating film 111 is placed as the inner wall. The anode region 106 and the source electrode 112 are coupled electrically and insulated from the gating electrode 108 by the insulating film.
EFFECT: improved degree of integration.
9 cl, 11 dwg
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