FIELD: physics.
SUBSTANCE: invention relates to electronic engineering. Proposed device comprises thermoelectric transducer (100) with heterostructure semiconductor plies (38) to perform thermoelectric conversion and photoelectric transducer (102). At least one part of heterostructure semiconductor ply (38) of transducer (102) performs photoelectric conversion. In includes transistor (104) and/or diode comprising at least a part of heterostructure semiconductor plies acting as working layer.
EFFECT: combination of solid-state IC with thermoelectric transducer and transistor and/or diode to prevent interferences between p- and n-type elements.
15 cl, 11 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| HETEROSTRUCTURE MODULATED-DOPED FIELD-EFFECT TRANSISTOR | 2013 |
|
RU2534437C1 |
| PSEUDOMORPHIC HETEROINTERFACE MODULATION-DOPED FIELD-EFFECT TRANSISTOR | 2013 |
|
RU2534447C1 |
| POWERFUL MICROWAVE FIELD EFFECT TRANSISTOR BASED ON A SEMICONDUCTOR HETEROSTRUCTURE BASED ON GALLIUM NITRIDE | 2021 |
|
RU2782307C1 |
| PHOTOELECTRIC CONVERTER | 2015 |
|
RU2605839C2 |
| ULTRAVIOLET LIGHT EMITTING NITRIDE SEMICONDUCTOR ELEMENT AND ULTRAVIOLET LIGHT EMITTING NITRIDE SEMICONDUCTOR DEVICE | 2015 |
|
RU2664755C1 |
| PHOTOCONVERTER MANUFACTURING METHOD | 2019 |
|
RU2721161C1 |
| SEMICONDUCTOR PHOTODIODE FOR INFRARED RADIATION | 2011 |
|
RU2469438C1 |
| HETEROSTRUCTURAL FIELD-EFFEC TRANSISTOR BASED ON GALLIUM NITRIDE WITH IMPROVED TEMPERATURE STABILITY OF CURRENT-VOLTAGE CHARACTERISTICS | 2016 |
|
RU2646536C1 |
| INFRARED LIGHT-EMITTING HETERODIODE | 2022 |
|
RU2793618C1 |
| MODULATION-DOPED FIELD-EFFECT TRANSISTOR | 2013 |
|
RU2539754C1 |
