METHOD TO MAKE POWERFUL HIGH-VOLTAGE SILICON DEVICES Russian patent published in 2011 - IPC H01L21/26 

FIELD: electricity.

SUBSTANCE: in the method to make powerful high-voltage silicon devices, including development of a semiconductor structure, comprising a blocking p⁺N-transition, by means of thermal diffusion of admixtures into silicon of N-type conductivity, which create layers of p⁺ and n⁺-type conductivity, applying ohmic contacts structure onto the surface, its radiation at the side of the specified p⁺N-transition with the energy of 350÷550 keV and an appropriate dose of 5·10¹⁷ cm^-2 ÷ 1·10¹⁶ cm^-2, and radiation of this structure at any side by electrons with the energy of 1÷10 MeV and dose F, determined from the stated ratio.

EFFECT: invention provides for manufacturing of powerful high-voltage semiconductor silicon devices with low losses of capacity during their operation, cheapening and acceleration of the technological manufacturing process.

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