MESASTRUCTURAL PHOTODIODE BASED ON HETEROEPITAXIAL STRUCTURE OF INGAAS / ALINAS / INP Russian patent published in 2017 - IPC H01L31/101 

FIELD: physics.

SUBSTANCE: invention relates to photodetector array (FDA) based on photodiode (FD) fabricated by the meza-technology in heteroepitaxial III-V InGaAs/AlInAs/InP semiconductor structures converting radiation in the short-wave infrared region of the spectrum (0.9-1.7 mcm). According to the invention, an additional layer with a gradient composition change is introduced into the heteroepitaxial InGaAs/AlInAs/InP structure between the absorption layer and the barrier layer to eliminate the discontinuity in the region of the valence structure band. At the edges of the gradient layer, two delta-doped layers are formed to equalize the energy level of the valence band and to increase its homogeneity.

EFFECT: ability to eliminate the barrier in the valence band and thereby to increase the quantum efficiency, and the sensitivity in the matrix photodetector devices based on these compounds.

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