SEMICONDUCTOR SENSOR OF ULTRAVIOLET RADIATION Russian patent published in 2007 - IPC H01L31/09 

FIELD: micro-electronic measuring equipment, possible use in construction and technology of production of semiconductor sensors of ultraviolet radiation.

SUBSTANCE: sensor contains substrate, including monocrystalline and porous layers of silicon carbide, electro-isolation cover, applied to porous layer of substrate on the side of received light radiation, electrode system, including rectifying electrode, connected to porous layer of substrate with generation of Schottky contact through window, made in electric-isolation cover, and output contacts, connected to electrode system for connection of sensor to external electric circuit and feeding shifting voltage. Porous layer is formed directly on the surface of monocrystalline substrate layer, and its depth of l nanometers is made from calculation, that l=(0,8÷1,0)W, where W - width of depleted area in nanometers. In planar variant substrate has n- or p- conductivity type, while formed on substrate are two groups of Schottky contacts and two output contacts, connected to rectifying electrodes with forming of configuration of pair of oppositely directed combs for provision of oppositely-parallel engagement of Schottky diodes.

EFFECT: increased sensitivity to ultraviolet radiation and simplified construction of sensor.

2 cl, 2 ex, 2 tbl, 2 dwg