SEMICONDUCTOR ULTRAVIOLET-RADIATION SENSOR Russian patent published in 2002 - IPC

FIELD: microelectronics. SUBSTANCE: semiconductor sensor designed for selective detection of ultraviolet radiation in the range of 280 to 340 nm has substrate made of n⁺ single-crystalline silicon carbide with n epitaxial layer, resistive electrode connected to n⁺ region of substrate, insulating coating deposited on n layer of irradiated side of substrate, rectifying electrode connected to n layer of substrate through port made in insulating layer to form Schottky-barrier contact, and terminal contact member connected to rectifying electrode for its connection to external electric circuit and for applying bias voltage between resistive and rectifying electrodes. Novelties introduced in said design are as follows: rectifying electrode is made of high-melting contact metal whose melting point is not lower than 1877 C; rectifying electrode surface on irradiated side is covered with silver light filter, 8-15 nm in thickness; rectifying electrode thickness is from 4 to 10 nm. ; rectifying electrode is connected to n layer of substrate through intermediate layer of metal carbide used for manufacturing said electrode, its thickness being 1-7 nm. EFFECT: enhanced ultraviolet-radiation detection range. 2 cl, 4 dwg, 2 tbl