HIGH-TEMPERATURE SEMICONDUCTOR DEVICE AND PROCESS OF ITS MANUFACTURE Russian patent published in 2001 - IPC

FIELD: microelectronics, design and manufacturing technology of Schottky-barrier diodes. SUBSTANCE: high-temperature semiconductor device has semiconductor substrate 1, ohmic electrode 2 and multilayer rectifying electrode 3 positioned on substrate 1 and incorporating barrier-forming layer 4 coupled to substrate 1 with formation of Schottky barrier, intermediate layer 5 made of material based on refractory metal and outer layer 6 produced from noble metal. For rise of temperature and radiation resistance layer 4 is made of chromium and is coupled to substrate 1 with formation of transient zone 8 of chromium carbide, output contact 7 is formed on outer layer 6. Substrate 1 is fabricated from SiC of n⁺ type with homoepitaxial n-layer 10 doped with nitrogen to level of 7·10¹⁵ to 1·10¹⁸cm^-3 located at point of formation of Schottky barrier. Protective sealing layer 11 is deposited on electrode 3. In process f manufacture of high-temperature semiconductor device structure n-n⁺ SiC with epitaxial n-layer doped with nitrogen to level of 7·10¹⁵ to 1·10¹⁸cm^-3 is used in the capacity of substrate, Cr is utilized as barrier-forming metal, multilayer rectifying electrode is formed in single technological cycle by magnetron sputtering. Protective dielectric layer is deposited on surface of multilayer rectifying electrode 3 and n-layer of substrate after microprofiling. Output contact made of noble metal is formed in window of protective layer. High-temperature firing is conducted after deposition of metal of ohmic electrode and after finish of formation of output contact. EFFECT: increased functional reliability of device under experimental conditions of temperature and radiation. 4 cl, 3 dwg, 2 tbl