PLANT FOR ION-PLASMA SPRAYING Russian patent published in 2000 - IPC

Abstract RU 2160323 C2

FIELD: instrumentation engineering; magnetic recording technique; obtaining magnetically-active layers at any preset degree of atomic disordering. SUBSTANCE: proposed plant includes vacuum chamber connected with plasma-forming gas bleeding-in system where planar magnetron sprayer with target cathode, anode and substrate holder are located; metering unit is located between planar magnetron sprayer and substrate holder. Metering unit may be made in form of rotatable disk with sectors of special shape or in form of plate with rectangular slots for reciprocating motion. EFFECT: avoidance of heating of surface of film being deposited at considerable specific power. 3 cl, 2 dwg, 1 ex

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RU 2 160 323 C2

Authors

Anashko A.A.

Litvintsev V.V.

Egorov S.N.

Krotova N.I.

Dates

2000-12-10Published

1998-02-19Filed