FIELD: metallurgy.
SUBSTANCE: in the doping technique of epitaxial layers of gallium nitride by germanium, including germanium introduction into solid model, heating, annealing and cooling, germanium is introduced by means of irradiation of epitaxial layers of gallium nitride by particle flux, containing thermal neutron with flux density no more than 1012 cm-2s-1, heating is implemented with rate 10÷30 deg/min till the annealing temperature, defined by presented ratio, annealing is implemented during 20 minutes, cooling is implemented with rate 10÷20 deg/min till the temperature 450÷500°C, and then with the rate 20÷40 deg/min till indoor temperature.
EFFECT: receiving of uniformly alloyed layers of gallium nitride with improved electrophysical properties.
1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PROCESSING MONOCRYSTALLINE EPITAXIAL LAYERS OF GROUP III NITRIDES | 2006 |
|
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| METHOD OF VACUUM EPITAXIAL GROWING OF DOPED GERMANIUM LAYERS | 2017 |
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| PRODUCTION METHOD OF TIN-DOPED INDIUM PHOSPHIDE MONOCRYSTALS | 2006 |
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