SILICON OXIDATION METHOD Russian patent published in 2001 - IPC

FIELD: electronics, namely micro- and nanoelectronics, possibly manufacture of integrated circuits with quantum-size heteroepitaxial structures on insulated substrates. SUBSTANCE: method is based upon anode polarization of silicon in electrolyte solutions and it is realized at using as oxidizers electrolyte solutions in light homofunctional ketones. EFFECT: enlarged assortment of electronic articles due to using quantum-size semiconductor structures non-suitable for heat treatment, enhanced electrical insulation in silicon-on-insulator structures due to creation of high-quality hidden oxide layers, possibility for making pliable insulated silicon substrates for heteroepitaxial growing of semiconductive materials. 3 dwg, 3 ex