SILICON PRODUCTION PROCESS Russian patent published in 1998 - IPC

Abstract RU 2116963 C1

FIELD: silicon technology. SUBSTANCE: process is based on reaction of thermal decomposition of gaseous silicon-containing compound on electrically heated silicon substrates to form elementary silicon and gaseous reaction products. As silicon- containing compound, tetraamminosilicon fluoride with formula Si₃(NH₃)₄F₁₂ is used. EFFECT: improved purity of semiconductor silicon and increased yield of product. 2 dwg, 1 tbl

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RU 2 116 963 C1

Authors

Jakovlev Ju.I.

Dates

1998-08-10—Published

1997-06-06—Filed