METHOD OF PRODUCING SILICON CHANNEL MATRIX Russian patent published in 2011 - IPC H01L21/3063 B82B3/00 

FIELD: machine building.

SUBSTANCE: proposed method comprises anode etching of single-crystal p-type silicon with seed holes on surface in solution of electrolytes containing ions of hydrogen and fluorine, stopping opened micro channels by plugs of silicon dioxide nanoparticles to perform low-temperature deposition of porous-silicon film on matrix continuous surface and produce channels from pores of said silicon in entire nanometre range.

EFFECT: decreased transverse sizes of channels, expanded range of products, lower costs.

7 cl, 6 dwg