CHANNEL MATRIX OBTAINING METHOD Russian patent published in 2011 - IPC H01L21/00 B82B3/00 

Abstract RU 2428763 C1

FIELD: electricity.

SUBSTANCE: in method for obtaining the channel matrix after anode etching of plate of hole-type single-crystalline silicon with seed pits on surface in solution of electrolytes, which contains hydrogen and fluor ions, and after channels are opened, materials are deposited on front surface of plate till the specified cross dimension of channels is obtained.

EFFECT: improving operating characteristics owing to high mechanical and structural properties, considerable enlargement of range of cross dimensions of channels, which allows enlarging the range of items of membrane equipment on the basis of biocompatible and high-technology silicon.

10 cl, 6 dwg

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RU 2 428 763 C1

Authors

Romanov Sergej Ivanovich

Vandysheva Natal'Ja Vladimirovna

Semenova Ol'Ga Ivanovna

Kosolobov Sergej Sergeevich

Dates

2011-09-10Published

2010-06-15Filed