METHOD FOR POLISHING OF WAFERS OF CERAMIC MATERIALS Russian patent published in 2001 - IPC

FIELD: semiconductor equipment, applicable in production of passive boards for hybrid integrated circuits. SUBSTANCE: the method for polishing consists in influence of a tool and polishing compound on the wafer surface. The polishing compound contains diamond powder, glycerin and a synthetic detergent. Diluent is dosed to the zone of treatment. The quantities of polishing compound and diluent are taken from relation 1:(3-6) relative units respectively. Polishing is carried out to a depth of at least 30μm, at least in two stages. I n the first stage water is used as diluent, and in the second stage - 3.4-11.0 - percent colloidal solution of silicon dioxide. In the second stage the allowance of 15 μm is removed. EFFECT: improved quality of surface for subsequent bonding of wafers by vacuum deposition. 1 tbl, 1 ex