METHOD FOR POLISHING SEMICONDUCTOR MATERIALS Russian patent published in 2007 - IPC H01L21/304 B24B1/00 

FIELD: semiconductor engineering.

SUBSTANCE: proposed method is meant to manufacture semiconductor devices used for treatment of undersides of structures with finished chips as well as to produce original silicon, germanium, and other wafer-substrates. Wafers to be treated are secured on head. The latter and tool are set in rotary motion, and polishing mixture is fed to treatment area. Tool used for treatment has intermittent polyurethane working layer and runs at speed of 1400-2000 rpm; wafer-carrying head rotates at speed of 300-550 rpm with specific pressure of 250-350 G/cm² applied to surface being treated. Polishing mixture used for the purpose incorporates diamond powder with grain size of 5-1 μm, domestic detergent, silica powder, and glycerin , volume ratio of glycerin to detergent being 3:1 - 4:1, that of silica powder to glycerin-detergent mixture, 1:1 - 2:1, and of diamond powder to general composition, 8-9 g per liter. Droplets of thinner in the form of water are fed to surface being treated.

EFFECT: enhanced quality and productivity of process, improved environmental friendliness, enlarged functional capabilities.

2 cl, 4 dwg, 1 tbl, 3 ex