METHOD FOR TREATMENT OF SEMICONDUCTOR WAFERS Russian patent published in 2005 - IPC

FIELD: semiconductor engineering; manufacture of extremely thin semiconductor structures and diaphragms.

SUBSTANCE: proposed method includes sticking of wafers and locking plates on faceplate using hold-down devices and separate mechanical treatment of plate and wafer surfaces to attain their desired definite thickness; faceplate is provided with at least two areas for sticking wafers and plates separated by blind slots; stuck to one of these areas are plates made of material whose hardness is greater than that of semiconductor wafer material; locking plates are mechanically finished and semiconductor wafers are stuck to free area of faceplate without changing position of pre-treated locking plates on faceplate. Adhesive used for sticking locking plates has melting point higher by at least 15 - 20 °C than that of adhesive employed for sticking semiconductor wafers. Locking plates are stuck using hold-down device independent of that used for semiconductor wafers.

EFFECT: enhanced quality and precision of treatment of semiconductor wafers.

3 cl, 4 dwg