METHOD FOR APPLYING METAL-DIELECTRIC THIN FILMS Russian patent published in 2001 - IPC

FIELD: microelectronics, possibly manufacture of metal-dielectric thin films, for example for making large-value capacitors. SUBSTANCE: method for applying metal-dielectric thin films by vacuum deposition of successive layers of dielectric and conductive materials on substrate comprises steps of alternatively applying dielectric and conductive materials onto metallic substrate in such a way that to provide even number of conductive layers including substrate and to mutually connect all conductive layers by bridges according to pattern 2n → 2n+1 → 2n+4, where n =0,1, ...N. Invention allows to increase area of conductive (metallic) plates of capacitor. EFFECT: simplified manufacture of large-value capacitors. 2 dwg