CMOS STRUCTURE Russian patent published in 2001 - IPC

FIELD: complementary metal-oxide- semiconductor structures. SUBSTANCE: proposed CMOS structure has at least one MOS n-region, at least one MOS p-region, and substrate carrying on its surface set of contacts arranged at least partially in the form of uniform grid and used to apply desired voltage across respective sections of CMOS structure. Average number of substrate contacts per unit area and/or average area of substrate contacts per unit area in at least one MOS n-region is much smaller than in at least one MOS p-region. Number of substrate contacts per unit area in at least one MOS n-region at boundary between regions may be greater than in center of region. Proposed design provides for reducing number of substrate contacts and/or their space requirement as well as for their more dense packing. EFFECT: enhanced degree of structure miniaturization at same resistance to state locking. 3 cl, 3 dwg