PROCESS OF MANUFACTURE OF ELEMENTS OF STRUCTURES OF VERY SMALL SIZE ON SEMICONDUCTOR SUBSTRATE Russian patent published in 2001 - IPC

FIELD: microelectronics. SUBSTANCE: process of manufacture of elements of structures of very small size on semiconductor substrate provides for fabrication of multilayer protective structure, for formation of first layer, for instance, of polycrystalline silicon on it, for making of structure on it, for precipitation of second layer which can be selectively etched relative to first layer, for anisotropic etching of second layer saving microstructure on edge of structure, for formation of oxide layer around microstructure, for removal of microstructure, for anisotropic etching of layers of multilayer protective structure to surface of substrate, for oxidizing of surface of substrate and side walls of groove, for formation of electrode of gate from polysilicon in groove. There is also proposed process of manufacture of tunnel window for storage location of electrically erasable programmable permanent storage. EFFECT: manufacture of elements of structures of very small size when dimensions of structures are not limited by photolithography. 6 cl, 15 dwg