FIELD: computer engineering. SUBSTANCE: storage device has erasable programmable read-only cell in the form of column with floating gate and control gate. Cell is so thin that it is fully depleted. Control gate of erasable programmable read-only flash memory cell with separated gate or that of double-gate cell is made of p+--doped semiconductor material so that fully depleted cylinders enable expecting adequate pre-threshold behavior. EFFECT: improved reliability at sub-lithographic size of device. 10 cl, 12 dwg
