SEMICONDUCTOR POLISHING COMPOSITION AND SEMICONDUCTOR POLISHING PROCESS Russian patent published in 2001 - IPC

FIELD: science of semiconductor materials. SUBSTANCE: for polishing surface of type AI2

B^VI semiconductor so as to raise its electrophysical properties use is made of compound that has in its composition 2-20% of air-dust mixture, 3-60% of acidic etching agent, and 20-95% of water; polishing process is conducted under following conditions: specific pressure on specimens, 100-150 g/sq. cm; compound feed rate, 20-25 ml per minute; polishing table speed, 230-280 rpm; polishing process time, 20-90 minutes. EFFECT: improved quality and electrophysical characteristics of semiconductor surface. 2 cl