METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2012 - IPC H01L21/336 B82B3/00 

FIELD: physics.

SUBSTANCE: in the method of making a semiconductor device, involving formation of a gate insulator, gate electrodes, a drain, a source and working regions of the semiconductor device, between a layer of amorphous silicon and a film of dielectric material used to insulate the gate, a film of amorphous silicon nitride with thickness of 45-55 nm is formed at temperature 230-370°C and rate of growth of 100 nm/min.

EFFECT: reduced leak current, which ensures technological effectiveness, improved parameters, high quality and high percentage yield.

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