METHOD OF MAKING SEMICONDUCTOR STRUCTURE Russian patent published in 2010 - IPC H01L21/263 

FIELD: physics.

SUBSTANCE: silicon layer which is amorphised with oxygen ions is recrystallised with electron beams, wherein both sides of the silicon plate are simultaneously bombarded with electrons. The lower fixed electron beam provides uniform heating to temperature 1100°C, and the upper electron beam scans the surface of the plate at a speed of 1-5 mm/s and power density of 45-55 W/cm², causing local melting of the top silicon layer.

EFFECT: lower flaw density in semiconductor structures, improved parametres of structures, improved quality and higher percentage yield.

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