FIELD: semiconductor device manufacture.
SUBSTANCE: assembled semiconductor devices are treated at finishing stage with high-energy electrons at dose rate of 8 · 1014 - 6 · 1015 cm-2 and energy of 4 MeV followed by annealing at temperature of 150 - 200 °C for minimum 3 h.
EFFECT: enhanced power output, manufacturability, reliability, and yield; enlarged working range.
1 cl, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF THIN FILM TRANSISTOR MANUFACTURING | 2012 |
|
RU2522930C2 |
| SEMICONDUCTOR DEVICE MANUFACTURING PROCESS | 2004 |
|
RU2256980C1 |
| METHOD FOR PRODUCTION OF SEMICONDUCTOR DEVICE | 2020 |
|
RU2751982C1 |
| MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE | 2014 |
|
RU2567118C1 |
| FABRICATION OF SEMICONDUCTOR STRUCTURE | 2012 |
|
RU2515335C2 |
| SEMICONDUCTOR DEVICE MANUFACTURING METHOD | 2019 |
|
RU2734060C1 |
| METHOD FOR MAKING SEMICONDUCTOR DEVICE | 2017 |
|
RU2660296C1 |
| METHOD OF MAKING SEMICONDUCTOR STRUCTURE | 2010 |
|
RU2445722C2 |
| METHOD FOR MAKING A SEMICONDUCTOR STRUCTURE | 2005 |
|
RU2292607C1 |
| METHOD OF SEMICONDUCTOR DEVICE MANUFACTURING | 2015 |
|
RU2621372C2 |
